Structural Modification of Reduced Graphene Oxide Thin Film Via Thermal Annealing
DOI:
https://doi.org/10.33003/fjs-2026-1013-4792Keywords:
Reduced Graphene Oxide, Thermal Annealing, Spin Coating, Thin Films, SEM, EDS, XRDAbstract
Reduced graphene oxide (rGO) is a promising material for thin film applications owing to its excellent structural, electrical, and mechanical properties. This study investigated the effects of thermal annealing and spin-coating cycles on the structural evolution of chemically reduced graphene oxide thin films. Graphene oxide (GO) was synthesized using the modified Hummers' method, chemically reduced with ascorbic acid, and deposited onto soda lime glass substrates by spin coating using one and two deposition cycles. The deposited films were thermally annealed at 100 °C and 200 °C under a N2/H2 atmosphere. Structural characterization was carried out using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). SEM analysis showed that increasing the annealing temperature improved film continuity, reduced surface agglomeration, and enhanced morphological uniformity, while increasing the number of spin-coating cycles increased the film thickness from approximately 150 nm to 350 nm, resulting in improved substrate coverage. EDS analysis revealed an increase in carbon content from 0.14 at.% to 66.20 at.% and a corresponding decrease in oxygen concentration from 1.87 at.% to 0.02 at.%, indicating progressive deoxygenation. XRD analysis confirmed the transformation from the graphene oxide (001) reflection to the graphitic (002) reflection, demonstrating partial restoration of the sp² carbon network and improved crystallographic ordering. The findings indicate that thermal annealing primarily enhances structural ordering, whereas additional spin-coating cycles improve film thickness and surface coverage, providing an effective approach for fabricating high-quality rGO thin films for electronic and energy-related applications.
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