GROWTH AND CHARACTERIZATION OF INDIUM OXIDE MICROSTRUCTURES USING CHEMICAL VAPOUR DEPOSITION METHOD
DOI:
https://doi.org/10.33003/fjs-2026-1006-5172Keywords:
Indium Oxide, Thin film, Microstructures, Nanostructures, Bandgap energyAbstract
Indium oxide (In₂O₃) thin films are typically deposited on quartz, sapphire, and silicon substrates by chemical vapour deposition (CVD) because of the high temperatures required during film growth. In this study, however, high-quality In₂O₃ thin films were successfully deposited on glass substrates using the CVD technique. The source temperature was varied from 850 °C to 1000 °C, while the substrates were positioned downstream in a lower-temperature region maintained between 400 °C and 500 °C. The morphological, structural, and optical properties of the deposited films were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and UV–Visible spectrometry, respectively. The results revealed significant temperature-dependent changes in the film morphology, accompanied by improved crystallinity at higher deposition temperatures. Optical studies further showed a reduction in the optical bandgap from 3.470 eV to 3.021 eV with increasing growth temperature. These findings demonstrate that controlled downstream CVD growth provides an effective route for synthesizing crystalline In₂O₃ thin films on low-cost glass substrates with tunable optical properties.
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Copyright (c) 2026 Tewrase M. Aper, Jonathan T. Ikyumbur, Augustine A. McAsule, Paul S. Amon, Oluwatosin S Obaseki
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