INVESTIGATION OF STRUCTURAL PROPERTIES OF ALUMINUM NITRIDE USING FIRST PRINCIPLES CALCULATION

  • Mahmud Abdulsalam
  • Suleiman Shuaibu
Keywords: DFT, GROUP-III NITRIDES, STRUCTURAL PARAMETER, GGA

Abstract

Group-III nitrides have received extensive attention because of their outstanding properties leading to different technological application. It is therefore important to conduct an accurate and systematic theoretical study of the structural properties of one of the important member of these materials. In this work, we studied the structural properties which include the convergence test, convergence of a plane wave cutoff energy, convergence test result with respect to k-points and lattice structural parameter .Our calculations of the structural properties of Aluminum nitride (AlN) were studied using first principle theoretical investigation of the AlN based on density functional theory (DFT) calculation within the generalized gradient approximation (GGA) which was used in the exchange correlation functional as implemented in quantum espresso. Obtained results are discussed within the employed theoretical methods of calculations. Result suggests that, the structure was successfully converged at the cut off-energy of -48.36054179 Ry. Also 45.0 Ry was also found to be as the Kinetic energy cut-off of the plane wave basis set in this research. Furthermore, 4x4x2 k-point was used as the k-point obtained in this research based on Monkhost and pack method of selecting k-point as implemented in (DFT).  The equilibrium value of the lattice parameter obtained at the point of minimum energy is about 3.95 Ǻ which are in good agreement with experimental value which was 4.05Ǻ. The deviation of result as shown in figure 4.5 from the experimental result is about 0.1Ǻ of absolute error which is equivalent to 2.5% of relative error, this shows that

References

Baei MT, Peyghan AA, Bagheri Z (2013) Fluorination of the exterior surface of AlN nanotube: a DFT study. Superlattices Microstruct 53:9–15. https ://doi.org/10.1016/j. spmi.2012.09.010

Curtarolo, S., Setyawan, W., Hart, G .L. W.,Jahnatek, M., Chepulskii, R. V., Taylor, R. H., Wang, S., Xue, J.,Yang, K., Levy, O., Mehl, M., Stokes, H. T., Demchenko, D. O. and Morgan, D. (2012). AFLOW: An automatic framework for high-throughput materials discovery. Computational Material Sciences, 58, 218-226.

Feneberg M, Leute RAR, Neuschl B et al (2010) High-excitation and high-resolution photoluminescence spectra of bulk AlN. Phys Rev B 82:75208. https ://doi.org/10.1103/PhysR evB.82.07520 8

Ince V and Solovyev. (2008) Combining DFT and many-body methods to understand correlated materials. Journal of Physics: Condensed Matter, 20(29):293201

Jain, A., Ong, S. P., Hautier, G., Chen, W., Richards, W. D., Dacek, S., Cholia, S., Gunter, D., Skinner, D., Ceder, G., and Persson, K. A. (2013). The material project: A materials genome approach to accelerating materials innovation. APL materials, 1(1), 011002.

K. Rezouali, M.A. Belkhir, A. Houari, J. Bai, (2009). Ab initio study of confinement and surface effects in hexagonal AlN nanotubes, Computed Mater. Sci. 45 (2009) 305-309.

Lei T, Ludwig KF, Moustakas TD (1993). Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates. J Appl Phys 74:4430–4437. https ://doi. org/10.1063/1.35441 4

Li H, Liu C, Liu G et al (2014). Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates. J Cryst Growth 389:1–4. https ://doi.org/10.1016/j.jcrys gro.2013.11.066

M. Dvorak, Su.H. Wei, Zh. Wu, (2013). Phys. Rev. Lett. 110 (2013) 016402.

M.T. Baei, A. Ahmadi Peyghan, Z. Bagheri, (2013). Fluorination of the exterior surface of AlN nanotube: A DFT study, Superlattices and Microstructures 53 (2013) 9-15.

Monkhorst, H. J. and Pack, J. D. (1976). Special points for Brillouin-zone intergrations. Physical Review B,13(12), 5188-5192.

Noei M, Salari AA, Ahmadaghaei N et al (2013) DFT study of the dissociative adsorption of HF on an AlN nanotube. C R Chim 16:985–989. https ://doi.org/10.1016/j.crci.2013.05.007

P. Tsipas, S. Kassavetis,D. Tsoutsou, E. Xenogiannopoulou, E. Golias, S. Giamini, C. Grazianetti, D. Chiappe, A. Molle, and M. Fanciulli, (2013). Appl. Phys. Lett. 103, 251605

Paola, G., Stefano, B., Nicola, B., Matteo, C., Roberto ,C., carlo, C., Davide, C., Guido, L. C., Matteo, C., Ismail, D. (2009). Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials. Journal of Physics: condensed matter, 21, 395502.

Perdew, J.P.,Burke, K., and Ernzerhof, M. (1996). Generalized gradient approximation made simple. Physical Review Letters, 77, 3865.

Richard M. Martin. (2004). Electronic Structure, Basic Theory and Practical Methods. CambridgeUniversity Press.

S. K. Yadav, R. Ramprasad, A. Misra, and X. Y. Liu, (2014). Acta Mater. 74, 268 (2014)

V.N. Tondare, C. Balasubramanian, S.V. Shende, D.S. Joag, V.P. Godbole, S.V. Bhoraskar, M. Bhadbhade, (2002). Field emission from open ended aluminum nitride nanotubes, Applied Physics Letter 80 (2002) 4813-4815.

W.-G. Jung, S.-H. Jung, P. Kung, M. Razeghi, (2006). Nanotechnology in Physics 17 (2006) 54.

X. Zhang, Z. Liu, and S. Hark, (2007). Solid State Commun. 143, 317–320 (2007).

Zou CW, Yin ML, Li M et al (2007). GaN films deposited by middle-frequency magnetron sputtering. Appl Surf Sci 253:9077– 9080. https ://doi.org/10.1016/j.apsus c.2007.05.037

Zou CW, Yin ML, Li M et al (2007) GaN films deposited by middle-frequency magnetron sputtering. Appl Surf Sci

Published
2020-04-14
How to Cite
AbdulsalamM., & ShuaibuS. (2020). INVESTIGATION OF STRUCTURAL PROPERTIES OF ALUMINUM NITRIDE USING FIRST PRINCIPLES CALCULATION. FUDMA JOURNAL OF SCIENCES, 4(1), 156 - 162. Retrieved from https://fjs.fudutsinma.edu.ng/index.php/fjs/article/view/33