TEMPERATURE VARIATION IN AN A-B BILAYER SYSTEM DURING RADIATION-INDUCED AB COMPOUND LAYER FORMATION
Abstract
Metal silicide formation plays a crucial role in microelectronics, particularly in contact and interconnect technologies. Traditional silicide fabrication methods rely on high-temperature annealing, which can lead to undesirable effects such as increased surface roughness and poor electrical contact. An alternative approach is irradiation-assisted silicide formation, which offers advantages such as lower processing temperatures and improved material properties. Understanding the thermal dynamics during irradiation-induced silicide growth is essential for optimizing this process. In this study, we present a mathematical model that describes the temperature dynamics in an A (metal) - B (silicon) bilayer system under the influence of radiation-induced heating during the formation of an AB (metal silicide) compound layer. The model describes heat generation rates within three irradiated A, AB, and B layers, each with distinct material properties. In this work, we used the nickel-silicon bilayer system as a case study. The result from this study shows that the heat generation rate exhibits both linear and parabolic dependencies on layer thickness and temperature change within the nickel silicide layer during radiation-induced heating. Furthermore, the model reveals a significant finding: the temperature obtained in this study for nickel silicide growth under irradiation is lower than its formation temperature under non-irradiation conditions (e.g., conventional heating processes). This result highlights one of the key advantages of employing irradiation techniques over non-irradiation methods. Lastly, the results also show that the thermal vacancy mechanism is not the dominant atomic transport mechanism during the irradiation of the nickel-silicon bilayer system.
References
Agarwal, G., Kulshrestha, V., Sharma, P., & Jain, I. P. (2010). Change in the microstructure at W/Si interface and surface by swift heavy ions. Journal of colloid and interface science, 351(2), 570-575. https://doi.org/10.1016/j.jcis.2010.07.055 DOI: https://doi.org/10.1016/j.jcis.2010.07.055
Akintunde, S. O., & Selyshchev, P. A. (2016). The influence of radiation-induced vacancy on The formation of thin-film of compound layer during a reactive diffusion process. Journal of Physics and Chemistry of Solids, 92, 64-69. https://doi.org/10.1016/j.jpcs.2016.01.020 DOI: https://doi.org/10.1016/j.jpcs.2016.01.020
Arranz, A., & Palacio, C. (2009). Low-energy Ar+ ion-beam induced vanadium silicide formation at V/Si interfaces. Thin Solid Films, 517(8), 2656-2660. https://doi.org/10.1016/j.tsf.2008.10.052 DOI: https://doi.org/10.1016/j.tsf.2008.10.052
Attix, F. H. (2008). Introduction to radiological physics and radiation dosimetry. John Wiley & Sons. ISBN 9783527617142
Boussaa, N., Guittoum, A., & Tobbeche, S. (2005). Formation of Ni2Si silicide in Ni/Si bilayers by ion beam mixing. Vacuum, 77(2), 125-130. https://doi.org/10.1016/j.vacuum.2004.07.081 DOI: https://doi.org/10.1016/j.vacuum.2004.07.081
Bower, R. W., Sigurd, D., & Scott, R. E. (1973). Formation kinetics and structure of Pd2Si films on Si. Solid-State Electronics, 16(12), 1461-1471. https://doi.org/10.1016/0038-1101(73)90063-4 DOI: https://doi.org/10.1016/0038-1101(73)90063-4
Chakraborty, B. R., Halder, S. K., Karar, N., Kabiraj, D., & Avasthi, D. K. (2005). Formation of cobalt silicides as a buried layer in silicon using high energy heavy ion irradiation. Journal of Physics D: Applied Physics, 38(16), 2836. https://doi.org/10.1088/0022-3727/38/16/015 DOI: https://doi.org/10.1088/0022-3727/38/16/015
D'Anna, E., Leggieri, G., Luches, A., & Majni, G. (1986). Chromium silicide formation with multiple electron beam pulses. Thin Solid Films, 140(1), 163-166. https://doi.org/10.1016/0040-6090(86)90170-7 DOI: https://doi.org/10.1016/0040-6090(86)90170-7
Jian-Qiang, L., Zhong-Lie, W., Xun-Liang, D., Ren-Yuan, H., & Fu-Zhai, C. (1989). A study of the chemical driving force in ion mixing of metal-metal systems. Vacuum, 39(2-4), 275-277. https://doi.org/10.1016/0042-207X(89)90217-0 DOI: https://doi.org/10.1016/0042-207X(89)90217-0
Majni, G., Nava, F., Ottaviani, G., Luches, A., Nassisi, V., & Celotti, G. (1982). Electron beam induced reactions in metal/Si systems. Vacuum, 32(1), 11-18. https://doi.org/10.1016/S0042-207X(82)80189-9 DOI: https://doi.org/10.1016/S0042-207X(82)80189-9
Matsuoka, M., Chubaci, J. F. D., Biersack, J. P., Watanabe, S., Kuratani, N., & Ogata, K. (1997). Nickel metallization of Si by dynamic ion-beam mixing. Radiation effects and defects in solids, 143(1), 65-74. https://doi.org/10.1080/10420159708212949 DOI: https://doi.org/10.1080/10420159708212949
Murarka, S. P. (2012). Silicides for VLSI applications. Academic press. ISBN 9780080570563
Pfeiler, W. (Ed.). (2007). Alloy physics: a comprehensive reference. John Wiley & Sons. ISBN 9783527313211 DOI: https://doi.org/10.1002/9783527614196
Sisodia, V., Sapnar, K. B., & Dhole, S. (2011). Ti silicide formation by interfacial mixing using swift heavy ion irradiation. Archives of Physics Research, 2(1), 54-67. (http://scholarsresearchlibrary.com/archive.html)
Swalin, R. (1962). Diffusion of interstitial impurities in germanium and silicon. Journal of Physics and Chemistry of Solids, 23(1-2), 154-156. https://doi.org/10.1016/0022-3697(62)90069-0 DOI: https://doi.org/10.1016/0022-3697(62)90069-0
Tamuleviius, S., Pranevicius, L., & Budinaviius, J. (1991). Application of dynamic ion mixing in platinum silicide formation. Applied surface science, 53, 159-164. https://doi.org/10.1016/0169-4332(91)90257-K DOI: https://doi.org/10.1016/0169-4332(91)90257-K
Wakita, A. S., Sigmon, T. W., & Gibbons, J. F. (1983). Oxidation kinetics of laser formed MoSi2 on polycrystalline silicon. Journal of Applied Physics, 54(5), 2711-2715. https://doi.org/10.1063/1.332296 DOI: https://doi.org/10.1063/1.332296
Was, G. S. (2007). Fundamentals of Radiation Materials Science: Metals and Alloys. Springer. https://doi.org/10.1007/978-1-4939-3438-6 DOI: https://doi.org/10.1007/978-1-4939-3438-6
Whang, C. N., Kim, H. K., Lee, R. Y., & Smith, R. J. (1989). Ar+ ion beam induced silicide formation mechanism at the Pd-Si interface. Journal of materials science, 24, 265-270. https://doi.org/10.1007/BF00660965 DOI: https://doi.org/10.1007/BF00660965
Ziegler, J. F., & Biersack, J. P. (1985). The stopping and range of ions in matter. In Treatise on heavy-ion science: volume 6: astrophysics, chemistry, and condensed matter (pp. 93-129). Boston, MA: Springer US. https://doi.org/10.1007/978-1-4615-8103-1_3 DOI: https://doi.org/10.1007/978-1-4615-8103-1_3
Copyright (c) 2025 FUDMA JOURNAL OF SCIENCES
This work is licensed under a Creative Commons Attribution 4.0 International License.
FUDMA Journal of Sciences
