MOLECULAR BEAM EPITAXY GROWTH OF HIGH-QUALITY InN NANORODS ON Si (111) SUBSTRATE

Authors

Keywords:

InN Nanorods, Si(111), Improved quality, XRD, Raman Spectroscopy

Abstract

The growth of high-quality InN nanorods (NRs) on Si (111) by plasma-assisted molecular beam epitaxy (PAMBE) is reported.  X-ray diffraction and Raman spectroscopy investigations indicates that the NRs are wurtzite, c-axis oriented and single crystalline. Low temperature photoluminescence emissions with peak energy of ~ 0.75eV was observed indicating the high quality of the nanostructures. This study unravels a novel strategy for the successful growth of high-quality InN NRs on Silicon which is highly promising for applications in next generation nanodevices.

Dimensions

REFERENCES

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Published

30-06-2024

How to Cite

MOLECULAR BEAM EPITAXY GROWTH OF HIGH-QUALITY InN NANORODS ON Si (111) SUBSTRATE. (2024). FUDMA JOURNAL OF SCIENCES, 8(3), 386-390. https://doi.org/10.33003/fjs-2024-0803-2423

Issue

Vol. 8 No. 3 (2024): FUDMA Journal of Sciences - Vol. 8 No. 3

Section

Research Articles
Copyright & Licensing

FUDMA Journal of Sciences

How to Cite

MOLECULAR BEAM EPITAXY GROWTH OF HIGH-QUALITY InN NANORODS ON Si (111) SUBSTRATE. (2024). FUDMA JOURNAL OF SCIENCES, 8(3), 386-390. https://doi.org/10.33003/fjs-2024-0803-2423