STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF BORON DOPED MONOLAYER GALLIUM ARSENIDE (GaAs) FOR OPTOELECTRONIC APPLICATION: A DFT STUDY. FUDMA JOURNAL OF SCIENCES, [S. l.], v. 9, n. 5, p. 187–195, 2025. DOI: 10.33003/fjs-2025-0905-3560. Disponível em: https://fjs.fudutsinma.edu.ng/index.php/fjs/article/view/3560. Acesso em: 5 sep. 2025.